Electron mobility and velocity in Al_0.45Ga_0.55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications

Ultra-wide bandgap AlGaN has attracted recent attention as a promising channel material for next-generation high electron mobility transistors (HEMTs) RF power due to its critical field, excellent transport properties, and potential operation in extreme environments. However, the effects of temperature on properties are not fully understood. Here, Al 0.62 Ga 0.38 N/Al 0.45 0.55 N HEMTs have been fabricated characterized up 150 °C at DC evaluate effect carrier velocity. Measured results indicate that both velocity exhibit modest dependence temperature, suggesting future applications.